Type Designator: A1020 Material of Transistor: Si Polarity: PNP Maximum Collector Power Dissipation (Pc): 0.9 W Maximum Collector-Base Voltage |Vcb|: 50 V Maximum Collector-Emitter Voltage |Vce|: 50 V Maximum Emitter-Base Voltage |Veb|: 5 V Maximum Collector Current |Ic max|: 2 A Max. Operating Junction Temperature (Tj): 150 °C Transition Frequency (ft): 100 MHz Collector Capacitance (Cc): 40 pF Forward Current Transfer Ratio (hFE), MIN: 70
