Type Designator: 2SK2611 Marking Code: K2611 Type of Transistor: MOSFET Type of Control Channel: N -Channel Pdⓘ – Maximum Power Dissipation: 150 W |Vds|ⓘ – Maximum Drain-Source Voltage: 900 V |Vgs|ⓘ – Maximum Gate-Source Voltage: 30 V |Vgs(th)|ⓘ – Maximum Gate-Threshold Voltage: 4 V |Id|ⓘ – Maximum Drain Current: 9 A Tjⓘ – Maximum Junction Temperature: 150 °C Qgⓘ – Total Gate Charge: 58 nC trⓘ – Rise Time: 25 nS Cossⓘ – Output Capacitance: 190 pF Rdsⓘ – Maximum Drain-Source On-State Resistance: 1.4 Ohm
