Type Designator: IRF9540 Type of Transistor: MOSFET Type of Control Channel: P -Channel Pdⓘ – Maximum Power Dissipation: 150 W |Vds|ⓘ – Maximum Drain-Source Voltage: 100 V |Vgs|ⓘ – Maximum Gate-Source Voltage: 20 V |Vgs(th)|ⓘ – Maximum Gate-Threshold Voltage: 4 V |Id|ⓘ – Maximum Drain Current: 19 A Tjⓘ – Maximum Junction Temperature: 175 °C Qgⓘ – Total Gate Charge: 61(max) nC trⓘ – Rise Time: 73 nS Cossⓘ – Output Capacitance: 590 pF Rdsⓘ – Maximum Drain-Source On-State Resistance: 0.2 Ohm Package: TO220AB
